Alignment mark detecting method

アライメントマーク検出方法

Abstract

PROBLEM TO BE SOLVED: To make it possible to detect a high-precision alignment mark by obtaining a symmetrical back-scattered electron signal waveform. SOLUTION: In an alignment mark detection method for detecting the central position of a cross alignment mark 30 during the process of manufacturing a semiconductor integrated circuit wherein a predetermined wiring layer is formed by an electron beam, an alignment mark 30 is formed by arranging recessed portions, made of holes 30a having wall surfaces facing those of adjacent holes 30a with a distance not of more than twice as large as the thickness of a film made of electrode material, on cross lines forming a cross shape. By so doing, the holes 30a are buried with the electrode material and a symmetrical back-scattered electron signal waveform is thereby obtained. COPYRIGHT: (C)1997,JPO
(57)【要約】 【課題】 アライメントマークの溝の膜厚が左右で非対 称となるので、膜厚が薄いエッジの方向に中心位置がシ フトする。 【解決手段】 電子ビームで所定の配線を描画する半導 体集積回路の製造工程で、十字形状のアライメントマー ク30の中心位置を検出するアライメントマーク検出方 法において、電極材料で成膜した膜厚の2倍以下の距離 で対向した壁面が形成された穴30aからなる凹部を、 十字形状を形成する各交差線上に配置してアライメント マーク30を形成する。上記のように形成することによ り、穴30aが電極材料で埋め込まれるので、左右対称 の反射電子信号波形が得られる。

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