Semiconductor integrated circuit



PURPOSE: To prevent an increase in contact resistance by a method wherein an upper electrode of a capacitance element is derived until a portion where a SOG collection is not caused to perform an interlayer connection. CONSTITUTION: A lower electrode area is formed on a face of an island area 23, and a dielectric thin film 27 and an upper electrode 28 are formed so as to coat an opening of an oxide film 26. A derivation electrode 29 extending on the oxide film 26 continuously from the upper electrode 28 is provided and an interlayer connection part 29a is formed therein. An interlayer insulator film containing a SOG film 31 is formed and a contact hole 33 is formed in the interlayer connection part 29a of the derivation electrode 29 to form a fetch-out electrode 32.
(57)【要約】 【目的】 容量素子の上部電極をSOGだまりが生じな い部分まで導出して層間接続を行うことにより、コンタ クト抵抗の増大を防ぐ。 【構成】 島領域23表面に下部電極領域を形成し、酸 化膜26の開口を覆うように誘電体薄膜27と上部電極 28を形成する。上部電極28から連続して酸化膜26 の上を延在する導出電極29を設け、ここに層間接続部 29aを形成する。SOG膜31を含む層間絶縁膜を形 成し、導出電極29の層間接続部29aにコンタクトホ ール33を形成して取り出し電極32を形成する。




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